Номер в каталоге
BUK6218-40C
Компоненты Описание
Other PDF
no available.
PDF
page
14 Pages
File Size
366 kB
производитель

NXP Semiconductors.
General description
Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.
FEATUREs and benefits
◾ AEC Q101 compliant
◾ Suitable for standard and logic level
gate drive sources
◾ Suitable for thermally demanding
environments due to 175 °C rating
APPLICATIONs
◾ 12 V Automotive systems
◾ Electric and electro-hydraulic power
steering
◾ Motors, lamps and solenoids
◾ Start-Stop micro-hybrid applications
◾ Transmission control
◾ Ultra high performance power
switching