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BTS442E2 Даташит - Infineon Technologies

BTS442E2 image

Номер в каталоге
BTS442E2

Компоненты Описание

Other PDF
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page
14 Pages

File Size
293.6 kB

производитель
Infineon
Infineon Technologies 

General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, integrated in Smart SIPMOS® chip on chip technology. Fully protected by embedded protection
functions


FEATUREs
• Overload protection
• Current limitation
• Short-circuit protection
• Thermal shutdown
• Overvoltage protection (including load dump)
• Fast demagnetization of inductive loads
• Reverse battery protection1)
• Undervoltage and overvoltage shutdown with
auto-restart and hysteresis
• Open drain diagnostic output
• Open load detection in ON-state
• CMOS compatible input
• Loss of ground and loss of Vbb protection2)
• Electrostatic discharge (ESD) protection


APPLICATION
• µC compatible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads
• All types of resistive, inductive and capacitve loads
• Replaces electromechanical relays and discrete circuits

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Номер в каталоге
Компоненты Описание
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производитель
Smart Highside Power Switch
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Siemens AG
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Siemens AG
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Infineon Technologies

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