BTD965N3 Даташит - Cystech Electonics Corp.
производитель
Cystech Electonics Corp.
Features
• Low VCE(sat), VCE(sat)=0.35 V (typical), at IC / IB = 3A / 0.1A
• Excellent DC current gain characteristics
• Complementary to BTB1386N3
Номер в каталоге
Компоненты Описание
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производитель
Low Vcesat NPN Epitaxial Planar Transistor
Cystech Electonics Corp.
Low Vcesat NPN Epitaxial Planar Transistor
Cystech Electonics Corp.
Low Vcesat NPN Epitaxial Planar Transistor
Cystech Electonics Corp.
Low Vcesat NPN Epitaxial Planar Transistor
Cystech Electonics Corp.
Low Vcesat NPN Epitaxial Planar Transistor
Cystech Electonics Corp.
Low Vcesat NPN Epitaxial Planar Transistor
Cystech Electonics Corp.
Low Vcesat NPN Epitaxial Planar Transistor
Cystech Electonics Corp.
Low Vcesat NPN Epitaxial Planar Transistor
Cystech Electonics Corp.
Low Vcesat NPN Epitaxial Planar Transistor
Cystech Electonics Corp.
Low Vcesat NPN Epitaxial Planar Transistor
Cystech Electonics Corp.
