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BS62LV2008DIG70 Даташит - Brilliance Semiconductor

BS62LV2008 image

Номер в каталоге
BS62LV2008DIG70

Компоненты Описание

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page
9 Pages

File Size
312.7 kB

производитель
BSI
Brilliance Semiconductor 

DESCRIPTION
The BS62LV2008 is a high performance, very low power CMOS
Static Random Access Memory organized as 262,144 words by 8 bits
and operates from a range of 4.5V to 5.5V supply voltage.


FEATURES
• Vcc operation voltage : 4.5V ~ 5.5V
• Very low power consumption :
    Vcc = 5.0V C-grade: 53mA (@55ns) operating current
                        I -grade: 55mA (@55ns) operating current
                        C-grade: 43mA (@70ns) operating current
                        I -grade: 45mA (@70ns) operating current
                        1.0uA(Typ.) CMOS standby current
• High speed access time :
    -55 55ns
    -70 70ns
• Automatic power down when chip is deselected
• Three state outputs and TTL compatible
• Fully static operation
• Data retention supply voltage as low as 1.5V
• Easy expansion with CE2, CE1, and OE options

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Номер в каталоге
Компоненты Описание
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производитель
Very Low Power/Voltage CMOS SRAM 256K X 8 bit ( Rev : 2004 )
PDF
Brilliance Semiconductor
Very Low Power/Voltage CMOS SRAM 256K X 8 bit
PDF
Brilliance Semiconductor
Very Low Power/Voltage CMOS SRAM 256K X 8 bit
PDF
Brilliance Semiconductor
Very Low Power/Voltage CMOS SRAM 256K X 8 bit
PDF
Brilliance Semiconductor
Very Low Power/Voltage CMOS SRAM 256K X 8 bit
PDF
Brilliance Semiconductor
Very Low Power/Voltage CMOS SRAM 256K X 8 bit
PDF
Brilliance Semiconductor
Very Low Power/Voltage CMOS SRAM 256K X 8 bit
PDF
Brilliance Semiconductor
Very Low Power/Voltage CMOS SRAM 256K X 8 bit
PDF
Brilliance Semiconductor
Very Low Power/Voltage CMOS SRAM 256K X 8 bit
PDF
Brilliance Semiconductor
Very Low Power CMOS SRAM 256K X 8 bit ( Rev : 2008 )
PDF
Brilliance Semiconductor

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