DESCRIPTION
NPN silicon planar epitaxial transistor intended for common emitter class-AB operation. The transistor is encapsulated in a 6-lead SOT171A flange envelope with a ceramic cap. All leads are isolated from the flange.

FEATURES
• Internal input matching to achieve high power gain and easy design of wideband circuits
• Emitter ballasting resistors for an optimum temperature profile
• Gold metallization ensures excellent reliability.

APPLICATIONS
• Base station transmitters in the 820 to 960 MHz range.