General description
350 W LDMOS power transistor intended for radar applications in the 2.7 GHz to 2.9 GHz range.

FEATUREs and benefits
■ Typical pulsed RF performance at a frequency of 2.7 GHz to 2.9 GHz, a supply voltage
   of 32 V, an IDq of 200 mA, a tp of 300 μs with δ of 10 %:
   ◆ Output power = 350 W
   ◆ Power gain = 13.5 dB
   ◆ Efficiency = 50 %
■ Easy power control
■ Integrated ESD protection
■ High flexibility with respect to pulse formats
■ Excellent ruggedness
■ High efficiency
■ Excellent thermal stability
■ Designed for S-band operation (2.7 GHz to 2.9 GHz)
■ Internally matched for ease of use
■ Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
   (RoHS)

APPLICATIONs
■ S-band power amplifiers for radar applications in the 2.7 GHz to 2.9 GHz frequency
   range