Номер в каталоге
BLS7G2729L-350P
Компоненты Описание
Other PDF
PDF
page
13 Pages
File Size
163.2 kB
производитель

NXP Semiconductors.
General description
350 W LDMOS power transistor for S-band radar applications in the frequency range from 2.7 GHz to 2.9 GHz.
FEATUREs and benefits
■ High efficiency
■ Excellent ruggedness
■ Designed for S-band operation (2.7 GHz to 2.9 GHz)
■ Excellent thermal stability
■ Easy power control
■ Integrated ESD protection
■ High flexibility with respect to pulse formats
■ Internally matched for ease of use
■ Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
APPLICATIONs
■ S-band radar applications in the frequent range 2.7 GHz to 2.9 GHz