Номер в каталоге
BLF573
Компоненты Описание
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no available.
PDF
page
16 Pages
File Size
139.3 kB
производитель

NXP Semiconductors.
General description
A 300 W LDMOS RF power transistor for broadcast applications and industrial, scientific and medical applications in the HF to 500 MHz band.
FEATUREs and benefits
■ Typical CW performance at frequency of 225 MHz, a supply voltage of 50 V and an IDq of 900 mA:
◆ Average output power = 300 W
◆ Power gain = 27.2 dB
◆ Efficiency = 70 %
■ Easy power control
■ Integrated ESD protection
■ Excellent ruggedness
■ High efficiency
■ Excellent thermal stability
■ Designed for broadband operation (HF and VHF band)
■ Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS)
APPLICATIONs
■ Industrial, scientific and medical applications
■ Broadcast transmitter applications