DESCRIPTION
Silicon N-channel enhancement mode vertical D-MOS transistor designed for professional transmitter applications in the HF/VHF frequency range.
The transistor is encapsulated in a 4-lead, SOT123 flange envelope, with a ceramic cap. All leads are isolated from the flange.

FEATURES
• High power gain
• Low noise
• Easy power control
• Good thermal stability
• Withstands full load mismatch
• Gold metallization ensures excellent reliability.