General description
A 1200 W LDMOS power transistor for broadcast applications and industrial applications in the HF to 110 MHz band.

FEATUREs and benefits
■ Typical pulsed performance at frequency of 108 MHz, a supply voltage of 50 V and an
   IDq of 40 mA, a tp of 100 μs with δ of 20 %:
   ◆ Output power = 1200 W
   ◆ Power gain = 28.5 dB
   ◆ Efficiency = 75 %
■ Easy power control
■ Integrated ESD protection
■ Excellent ruggedness
■ High efficiency
■ Excellent thermal stability
■ Designed for broadband operation (10 MHz to 110 MHz)
■ Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
   (RoHS)

APPLICATIONs
■ Industrial, scientific and medical applications
■ FM transmitter applications