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BF1208 Даташит - NXP Semiconductors.

BF1208 image

Номер в каталоге
BF1208

Компоненты Описание

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23 Pages

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618.3 kB

производитель
NXP
NXP Semiconductors. 

General description
The BF1208 is a combination of two dual gate MOSFET amplifiers with shared source and gate2 leads and an integrated switch. The integrated switch is operated by the gate1 bias of amplifier B.
The source and substrate are interconnected. Internal bias circuits enable DC stabilization and a very good cross-modulation performance during Automatic Gain Control (AGC). Integrated diodes between the gates and source protect against excessive input voltage surges. The transistor has a SOT666 micro-miniature plastic package.


FEATUREs and benefits
■ Two low noise gain controlled amplifiers in a single package. One with a fully integrated bias and one with a partly integrated bias
■ Internal switch to save external components
■ Superior cross-modulation performance during AGC
■ High forward transfer admittance
■ High forward transfer admittance to input capacitance ratio


APPLICATIONs
■ Gain controlled low noise amplifiers for VHF and UHF applications with 5 V supply voltage
    ◆ digital and analog television tuners
    ◆ professional communication equipment

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производитель
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NXP Semiconductors.
Dual N-channel dual gate MOSFET
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Philips Electronics
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Philips Electronics
Dual N-channel dual gate MOSFET
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NXP Semiconductors.
Dual N-channel dual gate MOSFET
PDF
NXP Semiconductors.
Dual N-channel dual gate MOSFET
PDF
Philips Electronics
Dual N-channel dual gate MOSFET
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NXP Semiconductors.
N-channel dual gate MOSFET
PDF
NXP Semiconductors.

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