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BD539 Даташит - Inchange Semiconductor
производитель

Inchange Semiconductor
DESCRIPTION
• DC Current Gain - : hFE = 40(Min.)@ IC= 0.5A
• Collector-Emitter Breakdown Voltage- : V(BR)CEO= 40V(Min)
• Complement to Type BD540
APPLICATIONS
• Designed for use in medium power linear and switching applications.
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производитель
Silicon NPN Power Transistor
Inchange Semiconductor
Silicon NPN Power Transistor
( Rev : V2 )
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Silicon NPN Power Transistor
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Silicon NPN Power Transistor
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Silicon NPN Power Transistor
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Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
Inchange Semiconductor