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BD317 Даташит - New Jersey Semiconductor
производитель

New Jersey Semiconductor
DESCRIPTION
• Excellent Safe Operating Area
• DC Current Gain-hFE= 25(Min.)@lc = 5A
• Collector-EmitterSaturation Voltage-
:VCE(Sat)=1.0V(Max)@lc = 8A
• Complement to Type BD318
APPLICATIONS
• Designed for high quality amplifiers operating
into 8 ohm load.
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производитель
Silicon NPN Power Transistor
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Silicon NPN Power Transistor
( Rev : V2 )
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
Inchange Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
Inchange Semiconductor