Номер в каталоге
BD312
Компоненты Описание
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New Jersey Semiconductor
BD312 Даташит - New Jersey Semiconductor
New Jersey Semiconductor
DESCRIPTION
• Excellent Safe Operating Area
• DC Current Gain-hFE= 25(Min.)@lc = -5A
• Collector-Emitter Saturation Voltage- :VCE(sat)=-1.0V(Max)@lc = -5A
• Complement to Type BD311
APPLICATIONS
• Designed for high quality amplifiers operating up to 60 watts into 4 ohm load.
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