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BD2320EFJ-LA Даташит - ROHM Semiconductor

BD2320EFJ-LA image

Номер в каталоге
BD2320EFJ-LA

Компоненты Описание

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page
21 Pages

File Size
1.1 MB

производитель
ROHM
ROHM Semiconductor 

General Description
This is the product guarantees long time support in industrial market.
BD2320EFJ-LA and BD2320UEFJ-LA are the 100 V maximum voltage High-Side and Low-Side gate drivers which can drive external Nch-FET using the bootstrap method. The driver includes a 100 V bootstrap diode and independent inputs control for High-Side and Low-Side. 3.3 V and 5.0 V are available for interface voltage. Under Voltage Lockout circuits are built in for High-Side and Low-Side.


FEATUREs
◾ Long Time Support Product for Industrial Applications.
◾ Under Voltage Lockout (UVLO) for High-Side and
   Low-Side Driver
◾ 3.3 V and 5.0 V Interface Voltage
◾ Output In-phase with Input Signal


APPLICATIONs
◾ Power Supplies for Telecom and Datacom.
◾ MOSFET Application
◾ Half-bridge and Full-bridge Converters
◾ Forward Converters


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Компоненты Описание
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