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BB304M PDF
BB304M Даташит - Hitachi -> Renesas Electronics
производитель

Hitachi -> Renesas Electronics
Features
• Build in Biasing Circuit; To reduce using parts cost & PC board space.
• High gain;
(PG = 29 dB typ. at f = 200 MHz)
• Low noise characteristics;
(NF = 1.2 dB typ. at f = 200 MHz)
• Wide supply voltage range;
Applicable with 5V to 9V supply voltage.
• Withstanding to ESD;
Build in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions. Provide mini mold packages; MPAK-4(SOT-143mod)
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производитель
Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier
Hitachi -> Renesas Electronics
Build in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier
Hitachi -> Renesas Electronics
Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier
Hitachi -> Renesas Electronics
Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier
Hitachi -> Renesas Electronics
Build in Biasing Circuit MOS FET IC VHF&UHF RF Amplifier
Hitachi -> Renesas Electronics
Build in Biasing Circuit MOS FET IC VHF&UHF RF Amplifier
Hitachi -> Renesas Electronics
Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier
Hitachi -> Renesas Electronics
Build in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier
Hitachi -> Renesas Electronics
Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier
Hitachi -> Renesas Electronics
Build in Biasing Circuit MOS FET IC UHF RF Amplifier
Hitachi -> Renesas Electronics