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BB303M PDF
BB303M Даташит - Hitachi -> Renesas Electronics
производитель
Hitachi -> Renesas Electronics
Features
• Build in Biasing Circuit; To reduce using parts cost & PC board space.
• High forward transfer admittance; (|yfs| = 42 mS typ. at f = 1 kHz)
• Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 250V at C=200pF, Rs=0 conditions.
• Provide mini mold packages; MPAK-4 (SOT-143 var.)
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производитель
Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier
Hitachi -> Renesas Electronics
Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier
Hitachi -> Renesas Electronics
Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier
Hitachi -> Renesas Electronics
Build in Biasing Circuit MOS FET IC VHF&UHF RF Amplifier
Hitachi -> Renesas Electronics
Build in Biasing Circuit MOS FET IC VHF&UHF RF Amplifier
Hitachi -> Renesas Electronics
Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier
Hitachi -> Renesas Electronics
Build in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier
Hitachi -> Renesas Electronics
Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier
Hitachi -> Renesas Electronics
Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier
Hitachi -> Renesas Electronics
Build in Biasing Circuit MOS FET IC UHF RF Amplifier
Hitachi -> Renesas Electronics
