HOME >>> Hitachi -> Renesas Electronics >>>
BB301M PDF
BB301M Даташит - Hitachi -> Renesas Electronics
производитель

Hitachi -> Renesas Electronics
Features
• Build in Biasing Circuit; To reduce using parts cost & PC board space.
• Low noise characteristics; (NF = 1.3 dB typ. at f = 200 MHz)
• Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200 V at C = 200 pF, Rs = 0 conditions.
Page Link's:
1
2
3
4
5
6
7
8
9
10
More Pages
Номер в каталоге
Компоненты Описание
View
производитель
Build in Biasing Circuit MOS FET IC VHF RF Amplifier
Hitachi -> Renesas Electronics
Build in Biasing Circuit MOS FET IC VHF RF Amplifier
Hitachi -> Renesas Electronics
Build in Biasing Circuit MOS FET IC VHF RF Amplifier
Hitachi -> Renesas Electronics
Build in Biasing Circuit MOS FET IC VHF RF Amplifier
Hitachi -> Renesas Electronics
Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier
Hitachi -> Renesas Electronics
Build in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier
Hitachi -> Renesas Electronics
Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier
Hitachi -> Renesas Electronics
Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier
Hitachi -> Renesas Electronics
Build in Biasing Circuit MOS FET IC VHF&UHF RF Amplifier
Hitachi -> Renesas Electronics
Build in Biasing Circuit MOS FET IC VHF&UHF RF Amplifier
Hitachi -> Renesas Electronics