Номер в каталоге
B1455
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New Jersey Semiconductor
B1455 Даташит - New Jersey Semiconductor
New Jersey Semiconductor
DESCRIPTION
• Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -80V(Mm)
• Low Collector Saturation Voltage-
: VCE(sat)= -0.5V(Max)@ (lc= -4A, I8= -0.4A)
• Complement to Type2SD2203
APPLICATIONS
• Designed for high-current switching applications.
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