HOME >>> New Jersey Semiconductor >>>
B1404 PDF
B1404 Даташит - New Jersey Semiconductor
производитель
New Jersey Semiconductor
DESCRIPTION
• Collector-Emitter Breakdown Voltage-.. :V(BR)cEo=-120V(Min)
• High DC Current Gain- : hFE= 1000(Min)@ (VCE= -3V, lc= -1.5A
APPLICATIONS
• Designed for low frequency power amplifier applications.
Номер в каталоге
Компоненты Описание
View
производитель
Silicon PNP Darlington Power Transistor
Inchange Semiconductor
Silicon PNP Darlington Power Transistor
New Jersey Semiconductor
Silicon PNP Darlington Power Transistor
New Jersey Semiconductor
Silicon PNP Darlington Power Transistor
New Jersey Semiconductor
Silicon PNP Darlington Power Transistor
New Jersey Semiconductor
Silicon PNP Darlington Power Transistor
New Jersey Semiconductor
Silicon PNP Darlington Power Transistor
New Jersey Semiconductor
Silicon PNP Darlington Power Transistor
New Jersey Semiconductor
Silicon PNP Darlington Power Transistor
Inchange Semiconductor
Silicon PNP Darlington Power Transistor
Inchange Semiconductor
