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AUIRFR9024N Даташит - Infineon Technologies

AUIRFU9024N image

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AUIRFR9024N

Компоненты Описание

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page
11 Pages

File Size
516.5 kB

производитель
Infineon
Infineon Technologies 

Description
Specifically designed for Automotive applications, this Cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications.


FEATUREs
 • Advanced Planar Technology
 • Low On-Resistance
 • P-Channel
 • Dynamic dv/dt Rating
 • 150°C Operating Temperature
 • Fast Switching
 • Fully Avalanche Rated
 • Repetitive Avalanche Allowed up to Tjmax
 • Lead-Free, RoHS Compliant
 • Automotive Qualified *

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Компоненты Описание
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