
Alliance Semiconductor
Functional description
The AS7C1024A and AS7C31024A are high performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) devices organized as 131,072 words x 8 bits. It is designed for memory applications where fast data access, low power, and simple interfacing are desired.
FEATUREs
• AS7C1024A (5V version)
• AS7C31024A (3.3V version)
• Industrial and commercial temperatures
• Organization: 131,072 words x 8 bits
• High speed
- 10/12/15/20 ns address access time
- 5, 6, 7, 8 ns output enable access time
• Low power consumption: ACTIVE
- 853 mW (AS7C1024A) / max @ 10 ns
- 522 mW (AS7C31024A) / max @ 10 ns
• Low power consumption: STANDBY
- 55 mW (AS7C1024A) / max CMOS
- 36 mW (AS7C31024A) / max CMOS
• Latest 6T 0.25u CMOS technology
• Easy memory expansion with CE1, CE2, OE inputs
• TTL/LVTTL-compatible, three-state I/O
• 32-pin JEDEC standard packages
- 300 mil SOJ
- 400 mil SOJ
- 8 × 20mm TSOP 1
- 8 x 13.4mm sTSOP 1
• ESD protection ≥ 2000 volts
• Latch-up current ≥ 200 mA