
Alliance Semiconductor
Functional description
The AS4LC4M4E0 and AS4LC4M4E1 are high performance 16-megabit CMOS Dynamic Random Access Memories (DRAM) organized as 4,194,304 words × 4 bits. The devices are fabricated using advanced CMOS technology and innovative design techniques resulting in high speed, extremely low power and wide operating margins at component and system levels. The Alliance 16Mb DRAM family is optimized for use as main memory in PC, workstation, router and switch applications.
FEATUREs
• Organization: 4,194,304 words × 4 bits
• High speed
- 50/60 ns RAS access time
- 25/30 ns column address access time
- 12/15 ns CAS access time
• Low power consumption
- Active: 500 mW max
- Standby: 3.6 mW max, CMOS I/O
• Extended data out
• Refresh
- 4096 refresh cycles, 64 ms refresh interval for AS4LC4M4E0
- 2048 refresh cycles, 32 ms refresh interval for AS4LC4M4E1
- RAS-only or CAS-before-RAS refresh or self-refresh
• TTL-compatible, three-state I/O
• JEDEC standard package
- 300 mil, 24/26-pin SOJ
• 3V power supply
• Industrial and commercial temperature available