Номер в каталоге
AON5802B
Компоненты Описание
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производитель
Alpha and Omega Semiconductor
AON5802B Даташит - Alpha and Omega Semiconductor
Alpha and Omega Semiconductor
General Description
The AON5802B/L uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V while retaining a 12V VGS(MAX) rating. This device is suitable for use as a uni-directional or bidirectional load switch, facilitated by its common-drain configuration.
AON5802B and AON5802BL are electrically identical.
-RoHs Compliant
-AON5802BL is Halogen Free
FEATUREs
VDS (V) = 30V
ID = 7.2A (VGS = 4.5V)
RDS(ON) < 19 mΩ (VGS = 4.5V)
RDS(ON) < 20 mΩ (VGS = 4.0V)
RDS(ON) < 23 mΩ (VGS = 3.1V)
RDS(ON) < 30 mΩ (VGS = 2.5V)
ESD Protected
Номер в каталоге
Компоненты Описание
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производитель
Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
Alpha and Omega Semiconductor
Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
Alpha and Omega Semiconductor
Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor ( Rev : 2003 )
Alpha and Omega Semiconductor
Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
Alpha and Omega Semiconductor
Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
Alpha and Omega Semiconductor
Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
Alpha and Omega Semiconductor
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