Номер в каталоге
AO8806
Компоненты Описание
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производитель
Alpha and Omega Semiconductor
AO8806 Даташит - Alpha and Omega Semiconductor
Alpha and Omega Semiconductor
General Description
The AO8806 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. It is ESD protected. Standard Product AO8806 is Pb-free (meets ROHS & Sony 259 specifications).
FEATUREs
VDS (V) = 20V
ID = 7 A (VGS = 4.5V)
RDS(ON) < 22mΩ (VGS = 4.5V)
RDS(ON) < 27mΩ (VGS = 2.5V)
RDS(ON) < 35mΩ (VGS = 1.8V)
Номер в каталоге
Компоненты Описание
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производитель
Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
Alpha and Omega Semiconductor
Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
Alpha and Omega Semiconductor
Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
Alpha and Omega Semiconductor
Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor ( Rev : 2003 )
Alpha and Omega Semiconductor
Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
Alpha and Omega Semiconductor
Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
Alpha and Omega Semiconductor
Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
Alpha and Omega Semiconductor
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