HOME >>> Alpha and Omega Semiconductor >>>
AO8800 PDF
AO8800 Даташит - Alpha and Omega Semiconductor
производитель

Alpha and Omega Semiconductor
General Description
The AO8800 uses advanced trench technology to provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX)rating. This device is suitable for use as a uni-directional or bi-directional load switch, facilitated by its common-drain
configuration.
FEATUREs
VDS(V) = 30V
ID= 6.4A
RDS(ON) < 24mΩ(VGS= 10V)
RDS(ON)< 30mΩ(VGS= 4.5V)
RDS(ON)< 40mΩ(VGS= 2.5V)
RDS(ON)< 70mΩ(VGS= 1.8V)
Номер в каталоге
Компоненты Описание
View
производитель
Common Drain Dual N-Channel Enhancement Mode Field Effect
ACE Technology Co., LTD.
Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
Alpha and Omega Semiconductor
Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
Alpha and Omega Semiconductor
Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
Alpha and Omega Semiconductor
Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor ( Rev : 2003 )
Alpha and Omega Semiconductor
Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
Alpha and Omega Semiconductor
Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
Alpha and Omega Semiconductor
Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
Alpha and Omega Semiconductor
Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
Unspecified
Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
Unspecified