GENERAL DESCRIPTION
   The Am29DL640G is a 64 megabit, 3.0 volt-only flash memory device, organized as 4,194,304 words of 16 bits each or 8,388,608 bytes of 8 bits each. Word mode data appears on DQ15–DQ0; byte mode data appears on DQ7–DQ0. The device is designed to be programmed in-system with the standard 3.0 volt VCC supply, and can also be programmed in standard EPROM programmers.

DISTINCTIVE CHARACTERISTICS
ARCHITECTURAL ADVANTAGES
◾ Simultaneous Read/Write operations
   — Data can be continuously read from one bank while
      executing erase/program functions in another bank.
   — Zero latency between read and write operations
◾ Flexible BankTM architecture
   — Read may occur in any of the three banks not being
      written or erased.
   — Four banks may be grouped by customer to achieve
      desired bank divisions.
◾ Boot Sectors
   — Top and bottom boot sectors in the same device
   — Any combination of sectors can be erased
◾ Manufactured on 0.17 µm process technology
◾ SecSi™ (Secured Silicon) Sector: Extra 256 Byte
   sector
   — Factory locked and identifiable: 16 bytes available for
      secure, random factory Electronic Serial Number;
      verifiable as factory locked through autoselect
      function. ExpressFlash option allows entire sector to
      be available for factory-secured data
   — Customer lockable: One-time programmable only.
      Once locked, data cannot be changed
◾ Zero Power Operation
   — Sophisticated power management circuits reduce
      power consumed during inactive periods to nearly
      zero.
◾ Compatible with JEDEC standards
   — Pinout and software compatible with
      single-power-supply flash standard

PACKAGE OPTIONS
◾ 63-ball Fine Pitch BGA
◾ 64-ball Fortified BGA
◾ 48-pin TSOP

PERFORMANCE CHARACTERISTICS
◾ High performance
   — Access time as fast as 70 ns
   — Program time: 4 µs/word typical utilizing Accelerate
      function
◾ Ultra low power consumption (typical values)
   — 2 mA active read current at 1 MHz
   — 10 mA active read current at 5 MHz
   — 200 nA in standby or automatic sleep mode
◾ Minimum 1 million erase cycles guaranteed per
   sector
◾ 20 year data retention at 125°C
   — Reliable operation for the life of the system