datasheetbank_Logo
Технический паспорт Поисковая и бесплатно техническое описание Скачать
HOME  >>>  TriQuint Semiconductor  >>> AGR19090EU PDF

AGR19090EU Даташит - TriQuint Semiconductor

AGR19090EU image

Номер в каталоге
AGR19090EU

Other PDF
  no available.

PDF
DOWNLOAD     

page
10 Pages

File Size
341.3 kB

производитель
TriQuint
TriQuint Semiconductor 

Introduction
The AGR19090E is a 90 W, 28 V N-channel laterally diffused metal oxide semiconductor (LDMOS) RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz—1990 MHz), wide-band code division multiple access (W-CDMA), global system for mobile communication (GSM/EDGE), time-division multiple access (TDMA), and single-carrier or multi-carrier class AB power amplifier applications.


Номер в каталоге
Компоненты Описание
View
производитель
125 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor
PDF
TriQuint Semiconductor
60 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor
PDF
TriQuint Semiconductor
45 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor
PDF
TriQuint Semiconductor
30 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor
PDF
TriQuint Semiconductor
180 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor
PDF
TriQuint Semiconductor
LDMOS RF Power Field Effect Transistor 160 W, 1930 – 1990 MHz
PDF
Infineon Technologies
LDMOS RF Power Field Effect Transistor 160 W, 1930 – 1990 MHz ( Rev : 2004 )
PDF
Infineon Technologies
LDMOS Field Effect Transistor 60 W, DCS/PCS Band 1805–1880 MHz, 1930–1990 MHz
PDF
Infineon Technologies
Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1930 – 1990 MHz
PDF
Infineon Technologies
Wireless Power Transistor 90 Watts, 1930-1990 MHz
PDF
Tyco Electronics

Share Link: GO URL

All Rights Reserved© datasheetbank.com  [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]