RF Power LDMOS Transistors
High Ruggedness N--Channel
Enhancement--Mode Lateral MOSFETs

These RF power transistors are designed for pulse applications operating at frequencies from 960 to 1215 MHz, such as distance measuring equipment (DME), secondary radars and high power transponders for air traffic control. These devices are suitable for use in pulse applications with large duty cycles and long pulses, including Mode S ELM.

FEATUREs
• Internally Input and Output Matched for Broadband Operation and Ease of Use
• Device Can Be Used Single--Ended, Push--Pull, or in a Quadrature
   Configuration
• Qualified up to a Maximum of 50 VDD Operation
• High Ruggedness, Handles > 20:1 VSWR
• Integrated ESD Protection with Greater Negative Voltage Range for Improved
   Class C Operation and Gate Voltage Pulsing
• Characterized with Series Equivalent Large--Signal Impedance Parameters

Typical Applications
• Air Traffic Control Systems (ATC), Including Ground--based Secondary Radars
   such as Mode S ELM Interrogators
• Distance Measuring Equipment (DME)
• Mode S Transponders, Including:
   – Traffic Alert and Collision Avoidance Systems (TCAS)
   – Automatic Dependent Surveillance--Broadcast In and Out (ADS--B)
      Using, e.g., 1090 Extended Squitter or Universal Access Transponder (UAT)