General Description
This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 12V).

FEATUREs
· –5 A, –20 V, RDS(ON) = 75 mW @ VGS = –4.5 V
RDS(ON) = 105 mW @ VGS = –3.0 V
RDS(ON) = 115 mW @ VGS = –2.7 V
· Extended VGSS range (±12V) for battery applications
· Low gate charge
· High performance trench technology for extremely
low RDS(ON)
· High power and current handling capability

APPLICATIONs
· Load switch
· Motor drive
· DC/DC conversion
· Power management