General Description
This N-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild's Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 10V).

FEATUREs
·  4.5 A, 20 V. RDS(ON)= 32 mW@ VGS= 4.5 V
                   RDS(ON)= 45 mW@ VGS= 2.5 V
·  Optimized for use in battery circuit applications
·  Extended VGSSrange (±10V) for battery applications
·  High performance trench technology for extremely low RDS(ON)
·  Low profile TSSOP-8 package