82731-3 Даташит - STMicroelectronics
производитель

STMicroelectronics
DESCRIPTION
The AM82731-003 device is a medium power silicon bipolar NPN transistor specifically designed for S-Band radar pulsed driver applications.
■ REFRACTORY/GOLD METALLIZATION
■ EMITTER SITE BALLASTED
■ 10:1 VSWR CAPABILITY
■ LOW THERMAL RESISTANCE
■ INPUT/OUTPUT IMPEDANCE MATCHING
■ OVERLAY GEOMETRY
■ METAL/CERAMIC HERMETIC PACKAGE
■ POUT = 3.0 W. MIN. WITH 5.7 dB GAIN
■ BANDWIDTH = 400 MHz
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производитель
RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS
STMicroelectronics
RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS
STMicroelectronics
RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS
STMicroelectronics
RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS
STMicroelectronics
RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS
STMicroelectronics
RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS
STMicroelectronics
RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS
STMicroelectronics
RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS
STMicroelectronics
RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS
STMicroelectronics
RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS
STMicroelectronics