Description
This Power MOSFET is produced using KIA`s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology.

FEATUREs
◾ RDS(on)=1.0Ω @ VGS=10V
◾ Ultra low gate charge (typical 27nC)
◾ Low reverse transfer capacitance
◾ Fast switching capability
◾ Avalanche energy tested
◾ Improved dv/dt capability, high ruggedness