Description
   The 4606 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications.

General Features
● N-Channel
   VDS = 30V,ID =6.9A
   RDS(ON) < 21mΩ @ VGS=10V
● P-Channel
   VDS = -30V,ID = -6.0A
   RDS(ON) < 45mΩ @ VGS=-10V
● High power and current handing capability
● Lead free product is acquired
● Surface mount package
   RDS(ON) < 32mΩ @ VGS=4.5V
   RDS(ON) < 60mΩ @ VGS=-4.5V