HiPerFET™ Power MOSFETs
   
N-Channel Enhancement Mode
High dv/dt, Low trr, HDMOSTM Family
   
Features
• International standard packages
• Low RDS (on) HDMOSTM process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS)
    rated
• Low package inductance
    - easy to drive and to protect
• Fast intrinsic Rectifier
   
Applications
• DC-DC converters
• Synchronous rectification
• Battery chargers
• Switched-mode and resonant-mode
    power supplies
• DC choppers
• AC motor control
• Temperature and lighting controls
• Low voltage relays
   
Advantages
• Easy to mount with 1 screw (TO-247)
    (isolated mounting screw hole)
• Space savings
• High power density