Номер в каталоге
3SK319YB-TL-E
Компоненты Описание
Other PDF
no available.
PDF
page
8 Pages
File Size
90.4 kB
производитель
Renesas Electronics
HOME >>> Renesas Electronics >>> 3SK319YB-TL-E PDF
3SK319YB-TL-E Даташит - Renesas Electronics
Renesas Electronics
Features
• Low noise characteristics;
(NF= 1.4 dB typ. at f= 900 MHz)
• Excellent cross modulation characteristics
• Capable low voltage operation; +B= 5V
Номер в каталоге
Компоненты Описание
View
производитель
Silicon N Channel Dual Gate MOS FET UHF / VHF RF Amplifier
Hitachi -> Renesas Electronics
Silicon N-Channel Dual Gate MOS FET UHF / VHF RF Amplifier
Hitachi -> Renesas Electronics
Share Link: 