3SK300 Даташит - Renesas Electronics
производитель

Renesas Electronics
Features
• Low noise figure.
NF = 1.0 dB typ. at f = 200 MHz
• High gain
PG = 27.6 dB typ. at f = 200 MHz
Page Link's:
1
2
3
4
5
6
7
Номер в каталоге
Компоненты Описание
View
производитель
Silicon N Channel Dual Gate MOS FET UHF / VHF RF Amplifier
Hitachi -> Renesas Electronics
Silicon N-Channel Dual Gate MOS FET UHF / VHF RF Amplifier
Hitachi -> Renesas Electronics
Silicon N-Channel Dual Gate MOS FET UHF RF Amplifier
Hitachi -> Renesas Electronics
Silicon N-Channel Dual Gate MOS FET UHF RF Amplifier
Renesas Electronics
Silicon N-Channel Dual Gate MOS FET UHF RF Amplifier
Renesas Electronics
Silicon N-Channel Dual Gate MOS FET UHF RF Amplifier
Hitachi -> Renesas Electronics
GaAs N Channel Dual Gate MES FET UHF RF Amplifier
Hitachi -> Renesas Electronics
Silicon N-Channel MOS FET / VHF amplifier
Hitachi -> Renesas Electronics
Si Nch Dual Gate MOS FET UHF RF LOW NOISE Amplifier
Renesas Electronics
Si Nch Dual Gate MOS FET UHF RF LOW NOISE Amplifier
Renesas Electronics