3N80Z(2013) Даташит - Unisonic Technologies
производитель

Unisonic Technologies
DESCRIPTION
The UTC 3N80Z provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.
FEATURES
* RDS(ON)=3.2Ω @VGS=10 V
* Ultra Low Gate Charge ( typical 19 nC )
* Low Reverse Transfer Capacitance ( CRSS = Typical 11 pF )
* Fast Switching Capability
* Avalanche Energy Specified
* Improved dv/dt Capability, High Ruggedness
Номер в каталоге
Компоненты Описание
View
производитель
N-Channel Power MOSFET 10A, 800Volts
Nell Semiconductor Co., Ltd
N-Channel Power MOSFET (6A, 800Volts)
Nell Semiconductor Co., Ltd
N-Channel Power MOSFET (4A, 800Volts)
Nell Semiconductor Co., Ltd
3 Amps, 800 Volts N-CHANNEL POWER MOSFET
Unisonic Technologies
3 Amps, 500 Volts N-CHANNEL POWER MOSFET ( Rev : 2011 )
Unisonic Technologies
Power MOSFET 3 Amps, 20 Volts N–Channel Micro8
ON Semiconductor
3 Amps, 600/650 Volts N-CHANNEL POWER MOSFET
Zibo Seno Electronic Engineering Co.,Ltd
3 Amps, 600/650 Volts N-CHANNEL POWER MOSFET
Unisonic Technologies
Power MOSFET 3 Amps, 30 Volts
ON Semiconductor
Power MOSFET 3 Amps, 30 Volts
ON Semiconductor