3DD155 Даташит - Inchange Semiconductor
производитель

Inchange Semiconductor
DESCRIPTION
• DC Current Gain
: hFE= 15-120@IC= 1A
• Collector-Emitter Saturation Voltage
: VCE(sat)= 1.0V(Max)@ IC= 1A
• Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
• Designed for B&W TV horizontal output , regulated power
supply and power amplifier applications.
Номер в каталоге
Компоненты Описание
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производитель
Silicon NPN Power Transistor
Inchange Semiconductor
Silicon NPN Power Transistor
( Rev : V2 )
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
Inchange Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
Inchange Semiconductor