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3DD102 Даташит - Inchange Semiconductor

3DD102 image

Номер в каталоге
3DD102

Компоненты Описание

Other PDF
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PDF
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page
2 Pages

File Size
154.6 kB

производитель
Iscsemi
Inchange Semiconductor 

DESCRIPTION
• Collector-Emitter Breakdown Voltage-
   : V(BR)CEO= 100V(Min.)
• DC Current Gain-
   : hFE= 20(Min.)@IC= 2A
• Collector-Emitter Saturation Voltage-
   : VCE(sat)= 0.8V(Max)@ IC= 2.5A


APPLICATIONS
• Designed for power amplifier , DC Transform T-Shirt


Номер в каталоге
Компоненты Описание
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