Description
The device is a NPN transistor manufactured using new BiT-LA (Bipolar transistor for linear amplifier) technology. The resulting transistor shows good gain linearity behaviour. Recommended for 70W to 100W high fidelity audio frequency amplifier output stage.

General features
■ High breakdown voltage VCEO=140V
■ Complementary to 2STW1695
■ Fast-switching speed
■ Typical ft =20MHz
■ Fully characterized at 125 oC
■ In compliance with the 2002/93/EC European Directive

APPLICATIONs
■ Audio power amplifier