2SK879-O(2003) Даташит - Toshiba
производитель
Toshiba
General Purpose and Impedance Converter and Condenser Microphone Applications
● High breakdown voltage: VGDS = −50 V
● High input impedance: IGSS = −1.0 nA (max) (VGS = −30 V)
● Low noise: NF = 0.5dB (typ.) (RG = 100 kΩ, f = 120 Hz)
● Small package
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производитель
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TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE ( Rev : 1997 )
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TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE ( Rev : 1997 )
Toshiba
TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE ( Rev : 1997 )
Toshiba
TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE ( Rev : 1997 )
Toshiba
