2SK3934 Даташит - Toshiba
производитель

Toshiba
Switching Regulator Applications
• Low drain-source ON resistance: RDS (ON) = 0.23 Ω (typ.)
• High forward transfer admittance: |Yfs| = 8.2 S (typ.)
• Low leakage current: IDSS = 100 μA (VDS = 500 V)
• Enhancement model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
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производитель
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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) ( Rev : 2006 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI)
Toshiba