datasheetbank_Logo
Технический паспорт Поисковая и бесплатно техническое описание Скачать
HOME  >>>  Toshiba  >>> 2SK3798 PDF

2SK3798 Даташит - Toshiba

2SK3798 image

Номер в каталоге
2SK3798

Other PDF
  2005   2006   2013  

PDF
DOWNLOAD     

page
6 Pages

File Size
188.9 kB

производитель
Toshiba
Toshiba 

Switching Regulator Applications

• Low drain-source ON resistance: RDS (ON)= 2.5Ω(typ.)
• High forward transfer admittance: |Yfs | = 2.8 S (typ.)
• Low leakage current: IDSS= 100 μA (VDS= 720 V)
• Enhancement-mode: Vth= 2.0 to 4.0 V (VDS= 10 V, ID= 1 mA)

Page Link's: 1  2  3  4  5  6 

Номер в каталоге
Компоненты Описание
View
производитель
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π- MOSIV) ( Rev : 2013 )
PDF
Toshiba
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π- MOSIV)
PDF
Toshiba
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π -MOSIV) ( Rev : 2005 )
PDF
Toshiba
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π -MOSIV) ( Rev : 2006 )
PDF
Toshiba
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π -MOSIV) ( Rev : 2009 )
PDF
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSIV) ( Rev : 2011 )
PDF
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π -MOSIV)
PDF
Toshiba
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSIV)
PDF
Toshiba
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSIV) ( Rev : 2006 )
PDF
Toshiba
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSIV) ( Rev : 2006 )
PDF
Toshiba

Share Link: GO URL

All Rights Reserved© datasheetbank.com  [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]