2SK3653C Даташит - NEC => Renesas Technology
производитель

NEC => Renesas Technology
DESCRIPTION
The 2SK3653C contains a diode and high resistivity between its gates and sources, for achieving short stability time during power-on. In addition, because of its compact package and low noise, the 2SK3653C is especially suitable for compact ECMs for audio or mobile devices such as cellphones.
FEATURES
• Low noise:
−108.5 dB TYP. (VDD = 2.0 V, C = 5 pF, RL = 2.2 kΩ)
• Containing a diode and high resistivity, short stability time is
achieved during power-on.
• Super thin thickness package: 3pXSOF (0814)
t = 0.37 mm TYP.
Номер в каталоге
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NEC => Renesas Technology
N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM
NEC => Renesas Technology
N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM
NEC => Renesas Technology
N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM
NEC => Renesas Technology
N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM
NEC => Renesas Technology
N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM
NEC => Renesas Technology
N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM
NEC => Renesas Technology