2SK3430-Z Даташит - NEC => Renesas Technology
Номер в каталоге
2SK3430-Z
производитель

NEC => Renesas Technology
DESCRIPTION
The 2SK3430 is N-channel MOS Field Effect Transistor designed for high current switching applications.
FEATURES
• Super low on-state resistance:
RDS(on)1 = 7.3 mΩ MAX. (VGS = 10 V, ID = 40 A)
RDS(on)2 = 15 mΩ MAX. (VGS = 4 V, ID = 40 A)
• Low Ciss: Ciss = 2800 pF TYP.
• Built-in gate protection diode
Номер в каталоге
Компоненты Описание
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производитель
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
NEC => Renesas Technology
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
NEC => Renesas Technology
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
NEC => Renesas Technology
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
Renesas Electronics
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
NEC => Renesas Technology
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
NEC => Renesas Technology
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
NEC => Renesas Technology
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
NEC => Renesas Technology
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
NEC => Renesas Technology
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
TY Semiconductor