Номер в каталоге
2SK3399
Компоненты Описание
PDF
page
6 Pages
File Size
203.7 kB
производитель
Toshiba
2SK3399 Даташит - Toshiba
Toshiba
Switching Regulator Applications
• Low drain-source ON resistance: RDS (ON)= 0.54 Ω(typ.)
• High forward transfer admittance: |Yfs| = 5.2 S (typ.)
• Low leakage current: IDSS= 100 μA (max) (VDS= 600 V)
• Enhancement mode: Vth= 3.0 to 5.0 V (VDS= 10 V, ID= 1 mA)
Номер в каталоге
Компоненты Описание
View
производитель
TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (π−MOSV)
TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (π−MOSV) ( Rev : 1999 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π−MOSV) ( Rev : 2006 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSV) ( Rev : 2006 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) ( Rev : 2009 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) ( Rev : 2006 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) ( Rev : 2006 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) ( Rev : 2006 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) ( Rev : 2010 )
Toshiba
Share Link: 