2SK3385 Даташит - NEC => Renesas Technology
производитель

NEC => Renesas Technology
DESCRIPTION
The 2SK3385 is N-Channel MOS Field Effect Transistor designed for high current switching applications.
FEATURES
• Low On-state Resistance
RDS(on)1 = 28 mΩ MAX. (VGS = 10 V, ID = 15 A)
RDS(on)2 = 45 mΩ MAX. (VGS = 4.0 V, ID = 15 A)
• Low Ciss : Ciss = 1500 pF TYP.
• Built-in Gate Protection Diode
• TO-251/TO-252 package
Номер в каталоге
Компоненты Описание
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производитель
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
NEC => Renesas Technology
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
NEC => Renesas Technology
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
NEC => Renesas Technology
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
Renesas Electronics
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
NEC => Renesas Technology
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
NEC => Renesas Technology
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
NEC => Renesas Technology
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
NEC => Renesas Technology
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
NEC => Renesas Technology
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
TY Semiconductor