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2SK3289 PDF
2SK3289 Даташит - Hitachi -> Renesas Electronics
производитель
Hitachi -> Renesas Electronics
Features
• Low on-resistance
RDS =1.26 Ω typ. (VGS = 10 V , ID = 150 mA)
RDS = 2.8 Ω typ. (VGS = 4 V , ID = 50 mA)
• 4 V gate drive device.
• Small package (CMPAK)
Номер в каталоге
Компоненты Описание
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производитель
Silicon N Channel MOS FET High Speed Switching
Hitachi -> Renesas Electronics
Silicon N Channel MOS FET High Speed Switching
Hitachi -> Renesas Electronics
Silicon N Channel MOS FET High Speed Switching
Renesas Electronics
Silicon N Channel MOS FET High Speed Switching
Renesas Electronics
Silicon N Channel MOS FET High Speed Switching
Hitachi -> Renesas Electronics
Silicon N Channel MOS FET High Speed Switching
Hitachi -> Renesas Electronics
Silicon N Channel MOS FET High Speed Switching
Hitachi -> Renesas Electronics
Silicon N Channel MOS FET High Speed Switching
Hitachi -> Renesas Electronics
Silicon N-Channel MOS FET HIGH SPEED SWITCHING
Hitachi -> Renesas Electronics
Silicon N Channel MOS FET High Speed Switching
Renesas Electronics
