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2SK3229 PDF
2SK3229 Даташит - Hitachi -> Renesas Electronics
производитель
Hitachi -> Renesas Electronics
Features
• Low on-resistance
RDS(on) =6mΩ typ.
• Low drive current
• 4V gate drive device can be driven from 5V source
Номер в каталоге
Компоненты Описание
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производитель
Silicon N-Channel MOS FET High Speed Power Switching
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Silicon N-Channel MOS FET High Speed Power Switching
Renesas Electronics
Silicon N-Channel MOS FET High Speed Power Switching
Renesas Electronics
Silicon N-Channel MOS FET High Speed Power Switching
Renesas Electronics
Silicon N-Channel MOS FET High Speed Power Switching
Renesas Electronics
Silicon N Channel MOS FET High Speed Power Switching
Renesas Electronics
Silicon N Channel MOS FET High Speed Power Switching ( Rev : 2006 )
Renesas Electronics
Silicon N Channel MOS FET High Speed Power Switching
Renesas Electronics
Silicon N Channel MOS FET High Speed Power Switching
Renesas Electronics
Silicon N Channel MOS FET High Speed Power Switching
Renesas Electronics
